ISSN 2224-087X (Print)
ISSN 2224-0888 (Online)

Collected scientific papers
"Electronics and information technologies"

(In 1966-2010 published under the title "Electrical engineering")

(Certificate of State Registration 17618-6468 from February 11, 2011)

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Issue 8

Issue 8, Pages: 127-134
Influence of deformation and high-temperature annealing on dislocation-related electroluminescence of p-type silicon
B. Pavlyk, M. Kushlyk, D. Slobodzyan, R. Lys, J. Shykoryak, R. Didyk, I. Matvijishyn
This paper, reports about ongoing research on the restructuring of dislocation-related electroluminescence centers in structures based on p-Si doped with oxygen.The generation of dislocations was carried out in the process of uniaxial plastic deformation along [112] direction (p = 107 Pa, T = 1000 K). In order to increase the concentration of oxygen-containing complexes and to rebuild defect subsystem in a near-surface silicon layer, a hightemperature annealing (T = 1300 K) in the flow-oxygen atmosphere was made.
It is shown that plastic deformation and high-temperature annealing in oxygen atmosphere generate high concentration of dislocations on silicon surface (107 m-2), which allows to create highly radiative Al-Si (p) structure. Electroluminescence spectra of these structures at different concentration of dislocations, duration of high-temperature annealing and pressure magnitude of elastic deformation were studied.
Such defects with the energy levels in the band gap Ev-0.08 eV (60 dislocation), Ev+0.14 eV (dislocation-V), Ev+0.26 eV (dislocation-O) correspond to dislocation-related electroluminescence (DEL) centers.
The elastic deformation has a slight impact to the intensity of bulk electroluminescense maximum intensity. For pressure values from 0 to 22 MPa, the intensity varies over the range of 1% from the 10 level. At the same time, as for the D2-D4 bands, the growth of the maximum intensity begins with pressure values of 10 MPa and up to 22 MPa. At maximum mechanical stress, the intensity value is ~ 1.5 times higher than the initial one. The evolution of the structural defects and impurities during the elastic stress increases intensity of D1-line (1.54m). Modeling of the underlying physical processes has testified that the near-contact Si layers are strained. Such layers act as getter sites for the structural defects and impurities.
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