ISSN 2224-087X (Print)
ISSN 2224-0888 (Online)

Collected scientific papers
"Electronics and information technologies"

(In 1966-2010 published under the title "Electrical engineering")

(Certificate of State Registration 17618-6468 from February 11, 2011)

Main page Search Editorial Policies Rules for Authors

Issue 60

Issue 60, Pages: 156-162
Evolution of charge in dielectric on the divide border Bi-Si-Al stimulated by radiation affect
B. Pavlyk, A. Hrypa, D. Slobodzyan, R. Lys, J. Shykoryak, R. Didyk
Radiation-stimulated changes in volt-farad characteristics, density of surface states and the value of effective charge localized in the dielectric layer were investigated. It was established that X-ray irradiation at doses D<260 Gr leads to the localization of positive charge at the generated capture centres and, consequently, reduces the amplitude characteristic peak at VFC. In the studied dose range the formation of new centres was not revealed.
PDF Version

Main page Search Editorial Policies Rules for Authors

© Ivan Franko National University of Lviv, 2011

Developed and supported - Laboratory of high performance computing systems