ISSN 2224-087X (Print)
ISSN 2224-0888 (Online)

Collected scientific papers
"Electronics and information technologies"

(In 1966-2010 published under the title "Electrical engineering")

(Certificate of State Registration 17618-6468 from February 11, 2011)

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Issue 60

Issue 60, Pages: 156-162
DOI: https://doi.org/
Evolution of charge in dielectric on the divide border Bi-Si-Al stimulated by radiation affect
B. Pavlyk, A. Hrypa, D. Slobodzyan, R. Lys, J. Shykoryak, R. Didyk
Radiation-stimulated changes in volt-farad characteristics, density of surface states and the value of effective charge localized in the dielectric layer were investigated. It was established that X-ray irradiation at doses D<260 Gr leads to the localization of positive charge at the generated capture centres and, consequently, reduces the amplitude characteristic peak at VFC. In the studied dose range the formation of new centres was not revealed.
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© Ivan Franko National University of Lviv, 2011

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